SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

This silicon carbide semiconductor device is provided with: a silicon carbide semiconductor layer; a gate insulating layer, which is disposed on the silicon carbide semiconductor layer, and which includes a silicon oxide film; a gate electrode that is disposed on the gate insulating layer; and a carbon transition layer, which is positioned between the silicon carbide semiconductor layer and the silicon oxide film, and in which carbon atom concentration with respect to carbon atom concentration of the silicon carbide semiconductor layer is 10 % or more but equal to or less than 90 %. In a carbon transition layer region, which is further toward the silicon oxide film side than the position where nitrogen atom concentration is maximum, the ratio of the integral value of the nitrogen atom concentration to the integral value of the carbon atom concentration is 0.11 or more.