METHOD FOR FABRICATING MEMORY DEVICE

摘要

A method for fabricating a memory device of this invention includes at least the following steps. A tunnel dielectric layer is formed over a substrate. A gate is fowled over the tunnel dielectric layer. At least one charge storage layer is formed between the gate and the tunnel dielectric layer. Two doped regions are formed in the substrate beside the gate. A word line is formed on and electrically connected to the gate, wherein the word line having a thickness greater than a thickness of the gate.

主权项

1. A method for fabricating a memory device, comprising:
forming a tunnel dielectric layer over a substrate; forming a first portion of a conductive layer over the tunnel dielectric layer; forming at least one charge storage layer between the first portion of the conductive layer and the tunnel dielectric layer; forming two doped regions in the substrate beside the first portion of the conductive layer; and forming a second portion of the conductive layer serving as a word line on and electrically connected to the first portion of the conductive layer, wherein the second portion of the conductive layer having a thickness greater than a thickness of the first portion of the conductive layer, wherein a ratio of the thickness of the second portion of the conductive layer to the thickness of the first portion of the conductive layer ranges from 5:1 to 10:1.