发明名称
摘要 PROBLEM TO BE SOLVED: To provide a contact material uniform in dispersibility of Te inside thereof and excellent in low surge performance. SOLUTION: A contact material according to the present invention has a structure where WC particles and a phase including a Cu<SB POS="POST">2</SB>Te phase surrounding around a Cu<SB POS="POST">3</SB>Te<SB POS="POST">2</SB>phase are dispersed in a base material mainly comprising Cu, and has a relative density of 90% or more of the theoretical density thereof. The contact material can be obtained by a production method comprising the steps of: mixing Cu powder having an average particle size of 1μm or greater and 10μm or less, WC powder having an average particle size of 75μm or greater and 150μm or less, and Te powder having an average particle size of 1μm or greater and 50μm or less; compressing the obtained mixture to sinter at a temperature of 600°C or above and 700°C or below; and recompressing the obtained sintered body to resinter at a temperature of 600°C or above and 700°C or below. COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5539265(B2) 申请公布日期 2014.07.02
申请号 JP20110121945 申请日期 2011.05.31
申请人 发明人
分类号 H01H33/664;B22F3/16;C22C1/05;C22C29/08;H01H11/04 主分类号 H01H33/664
代理机构 代理人
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