发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE WITH THICK METAL LAYERS |
摘要 |
A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region and first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region. First and second metal layers are disposed on the first and second metal contacts, respectively. The first and second metal layers are sufficiently thick to mechanically support the semiconductor structure. A sidewall of one of the first and second metal layers comprises a three-dimensional feature. |
申请公布号 |
EP2748866(A1) |
申请公布日期 |
2014.07.02 |
申请号 |
EP20120819139 |
申请日期 |
2012.12.04 |
申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
SCHIAFFINO, STEFANO;NICKEL, ALEXANDER H.;LEI, JIPU |
分类号 |
H01L33/00;H01L33/38 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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