| 摘要 |
A semiconductor device is provided such that a reverse leak current is suppressed, and a Schottky junction between a gate electrode and an epitaxial substrate is sufficiently reinforced. The semiconductor device includes an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, in which the epitaxial substrate includes a channel layer formed of a first group-III nitride having a composition of In x1 Al y1 Ga z1 N (x1 + y1 + z1 = 1, z1 > 0), a barrier layer formed of a second group-III nitride having a composition of In x2 Al y2 N (x2 + y2 = 1, x2 > 0, y2 > 0), and a contact layer formed of a third group-III nitride having insularity and adjacent to the barrier layer, and the Schottky electrode is connected to the contact layer. In addition, a heat treatment is performed under a nitrogen atmosphere after the gate electrode has been formed. |
