| 摘要 |
A method of producing a transistor array, comprising an array of addressing conductors each providing the source electrodes of a respective set of transistors and at least part of a conductive connection between a respective driver terminal and said source electrodes; wherein the method comprises: forming a conductor layer on a support; and displacing a plurality of portions of said conductor layer relative to other portions of said conductor layer to create from said conductor layer at least (i) said array of addressing conductors and an array of drain conductors at said first level, (ii) conductor element islands in transistor channel regions at a second level, and (iii) one or more further conductor elements at a third level. Also disclosed is the transistor array produced from the above method. Where a substantially continuous layer of semiconductor material may be formed over the arrays of source and drain conductors, the conductor element islands and the further conductor elements; and selectively decreasing the conductivity of the layer of semiconductor channel material in one or more regions over the one or more further conductor elements at the third level. |
