APPARATUS FOR MANUFACTURING SILICON CARBIDE AND METHOD FOR MANUFACTURING SILICON CARBIDE
摘要
An apparatus for manufacturing silicon carbide according to the present invention includes: a crucible for charging carbonized silicon (Si) and graphite (C); and an electromagnetism applying coil surrounding the outer surface of the crucible while applying high-frequency electromagnetic field onto the crucible. The method for manufacturing silicon carbide includes: a step for charging silicon (Si) and graphite (C) into the crucible; a step for generating silicon carbide by melting the silicon by heating the graphite by applying a first high-frequency electromagnetic field to the crucible; and a step for recovering the silicon carbide by moving the silicon carbide toward the surface of the crucible by applying a second high-frequency electromagnetic field to the crucible.
申请公布号
KR20140081990(A)
申请公布日期
2014.07.02
申请号
KR20120150605
申请日期
2012.12.21
申请人
POSCO;RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY
发明人
PARK, JOON PYO;KIM, JONG HO;KIM, SUNG WOOK;LEE, BYONG PIL;SEOK, SEONG HO