OXIDE THIN-FILM TRANSISTOR COMPRISING SELF-ASSEMBLY MONOLAYER AND METHOD FOR PREPARATION THEREOF

摘要

The present invention relates to an oxide thin-film transistor comprising a self-assembly molecular film and a preparation method thereof. The thin-film transistor according to the present invention including a gate electrode, a gate insulating film, a semiconductor film, and source/drain electrodes on a substrate can increase the mobility and reduce a threshold voltage by including the self-assembly molecular film on the gate insulating film.