Liquid crystal display device

摘要

In an IPS type liquid crystal display device having a reduced number of layers and formed through a reduced number of photolithography steps, an off current of a TFT is prevented from increasing due to photocurrent. A drain line, a TFT drain electrode, and a source electrode each have a multilayer structure including metal and a semiconductor layer. The drain line and the semiconductor layer formed thereunder are separated from the drain electrode and the semiconductor layer formed thereunder with the drain line and the drain electrode connected by a blocking conductive film formed of ITO of which the pixel electrode is also formed. Photocurrent generated by backlight is blocked by the blocking conductive film without flowing into the TFT. Therefore, the number of photomasks required in the production process can be decreased without an increase of causing the off current of the TFT.

主权项

1. A liquid crystal display device including a TFT substrate, a counter substrate, and liquid crystal held between the TFT substrate and the counter substrate,
wherein the TFT substrate has a gate electrode, a gate insulating film, and a semiconductor layer formed thereon in the cited order, the semiconductor layer having a drain electrode, a drain line, and a source electrode formed thereon except where a TFT channel region is formed; the gate insulating film has a rectangular pixel electrode of ITO formed thereon, the pixel electrode being overlappingly connected with the source electrode; the pixel electrode has a comb-teeth-shaped common electrode disposed thereon across an insulating film; the drain electrode on the semiconductor layer and the drain line on the semiconductor layer are electrically connected by a blocking conductive film formed of the same material as the pixel electrode; and the semiconductor layer under the drain electrode and the semiconductor layer under the drain line are physically connected by the blocking conductive film and are separated by the blocking conductive film as a barrier against holes; and the blocking conductive film which separates the semiconductor layer under the drain electrode and the semiconductor layer under the drain line is completely overlapped with the gate electrode in plan view.