| 摘要 |
<p>A nonvolatile memory apparatus includes a read/write control unit, a voltage generating unit, and a memory cell. The read/write control unit provides a bias voltage in response to a read control signal, a write control signal, and data. The voltage generating unit compares the bias voltage with a voltage of a sensing node and drives the sensing node with a voltage of a constant level. The memory cell is connected to the sensing node and receives the voltage of a constant level.</p> |
