| 发明名称 | Dopant-containing contact material | ||
| 摘要 | A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant. | ||
| 申请公布号 | US8766088(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201012793456 | 申请日期 | 2010.06.03 |
| 申请人 | First Solar, Inc. | 发明人 | Cheng Long;Gupta Akhlesh;Abken Anke;Buller Benyamin |
| 分类号 | H01L31/0224;H01L31/0296 | 主分类号 | H01L31/0224 |
| 代理机构 | Dickstein Shapiro LLP | 代理人 | Dickstein Shapiro LLP |
| 主权项 | 1. A photovoltaic device, comprising: a copper-doped molybdenum contact layer in direct contact with a semiconductor absorber layer, wherein the doped contact layer comprises a copper concentration of about 0.1% to about 10%, wherein the semiconductor absorber layer comprises a cadmium telluride layer. | ||
| 地址 | Perrysburg OH US | ||