| 发明名称 | Zirconium-doped tantalum oxide films | ||
| 摘要 | Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer can be formed of one or more monolayers of tantalum oxide doped with zirconium, provide an insulating layer in a variety of structures for use in a wide range of electronic devices. | ||
| 申请公布号 | US8765616(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201213618212 | 申请日期 | 2012.09.14 |
| 申请人 | Micron Technology, Inc. | 发明人 | Ahn Kie Y.;Forbes Leonard |
| 分类号 | H01L21/31;H01L21/469;H01L21/00;H01L21/16 | 主分类号 | H01L21/31 |
| 代理机构 | Schwegman, Lundberg & Woessner, P.A. | 代理人 | Schwegman, Lundberg & Woessner, P.A. |
| 主权项 | 1. A method comprising: forming tantalum oxide on a substrate using a self-limiting deposition process; doping the tantalum oxide with zirconium at different times during the self-limiting deposition process such that a zirconium-doped tantalum oxide is formed; and controlling the doping with zirconium to an amount such that the zirconium-doped tantalum oxide has a structure that does not differ significantly from an undoped tantalum oxide structure. | ||
| 地址 | Boise ID US | ||