| 发明名称 |
Buffer bilayers for electronic devices |
| 摘要 |
The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer. The second layer is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals. |
| 申请公布号 |
US8766239(B2) |
申请公布日期 |
2014.07.01 |
| 申请号 |
US200912645634 |
申请日期 |
2009.12.23 |
| 申请人 |
E I du Pont de Nemours and Company |
发明人 |
Zhang Chi;Hsu Che-Hsiung |
| 分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A buffer bilayer consisting of:
a first layer comprising at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer, and
a second layer consisting of a reacted layer of a metal selected from the group consisting of transition metals, Group 13 metals, Group 14 metals, and lanthanide metals. |
| 地址 |
Wilmington DE US |
