| 摘要 |
In a method of programming a nonvolatile memory device, when a program is performed, a program voltage is applied to a first word line selected for the program. A first pass voltage is applied to three second word lines neighboring the first word line toward a source select line. First and second voltages are applied to third and fourth word lines neighboring the first word line toward the source select line. A second pass voltage is applied to the remaining word lines other than the first to fourth word lines.
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