Integrated laser diodes with quality facets on GaN substrates

摘要

A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end.

主权项

1. A laser diode device on a gallium and nitrogen semipolar substrate, the laser diode device comprising:
a first waveguide section provided on the semipolar substrate extending in a projection of a c-direction, the first waveguide section having a first gain and loss characteristic and having a first end and a second end; a second waveguide section provided on the semipolar substrate and is substantially perpendicular to the first waveguide section and extending in an m-direction, the second waveguide section having a second gain and loss characteristic and extending between the first end of the first waveguide section and a first m-face facet, which is substantially perpendicular to the m-direction; and a total internal reflector surface configured at the first end of the first waveguide section to transmit light between the first waveguide section and the second waveguide section, the first waveguide section being configured in a perpendicular orientation to the second waveguide section.