Light emitting device, light emitting device package, and lighting device with the same

摘要

The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same.;The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.

主权项

1. A light emitting device, comprising:
a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a second electrode layer formed on an underside of the light emitting structure and electrically connected to the second conductive type semiconductor layer; a first electrode layer that passes through the second conductive type semiconductor layer and the active layer to contact with the first conductive type semiconductor layer; and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein the first electrode layer includes a first ohmic layer in contact with the first conductive type semiconductor layer and a first reflective layer that passes through the second conductive type semiconductor layer and the active layer to have an extension to the first conductive type semiconductor layer, the first ohmic layer and the first reflective layer being formed of different materials, and wherein the first reflective layer is in direct contact with the first conductive type semiconductor layer.