发明名称 |
Nonvolatile memory device and method for manufacturing same |
摘要 |
According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide. |
申请公布号 |
US8765565(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201313937906 |
申请日期 |
2013.07.09 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Aoyama Kenji;Yamamoto Kazuhiko;Ishikawa Satoshi;Oshino Shigeto |
分类号 |
H01L21/02;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for manufacturing a nonvolatile memory device, comprising:
forming a stacked body including a nanomaterial aggregate layer stacked with a selection element layer including silicon, the nanomaterial aggregate layer including a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies, at least a surface of the fine particle being made of an insulating material other than silicon oxide; forming a pillar by selectively removing the stacked body; and removing a by-product adhered to a side face of the pillar by using a chemical liquid providing a higher dissolution rate of the by-product than of the insulating material. |
地址 |
Minato-ku JP |