Method and system for transient voltage suppressors

摘要

A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

主权项

1. A method of forming a silicon carbide transient voltage suppressor (TVS) assembly, said method comprising:
providing a punch-through silicon carbide semiconductor transient voltage suppressor die that includes a first side and an opposite second side; encapsulating the die in a glass housing at least partially surrounding said die; and coupling a respective electrode in electrical communication with each of the first and the second sides, each electrode having a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the glass housing.