| 发明名称 | Semiconductor wafer, method of manufacturing a semiconductor wafer, and electronic device | ||
| 摘要 | The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a Ge crystal formed in the open portion; a seed compound semiconductor crystal that is grown with the Ge crystal as a nucleus and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface. | ||
| 申请公布号 | US8766318(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US200912920455 | 申请日期 | 2009.02.27 |
| 申请人 | Sumitomo Chemical Company, Limited | 发明人 | Hata Masahiko;Takada Tomoyuki |
| 分类号 | H01L29/12 | 主分类号 | H01L29/12 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A semiconductor wafer comprising: a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a nucleus Ge crystal formed in the open portion; a seed compound semiconductor crystal that is grown on top of the Ge crystal and that protrudes beyond a top surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface. | ||
| 地址 | Tokyo JP | ||