发明名称 HYBRID SUBSTRATE WITH HIGH DENSITY AND LOW DENSITY SUBSTRATE AREA AND MANUFACTURING METHOD THEREOF
摘要 The present invention relates to a hybrid substrate having high density and low density substrate regions and a manufacturing method thereof. According to an embodiment of the present invention, there is proposed a hybrid substrate having high density and low density substrate regions, comprising a low density substrate layer having a cavity formed in a middle region and a low density region with low pattern density around the cavity; a high density substrate layer embedded in the cavity of the low density substrate layer and including a high density region with pattern density higher than that of the low density region; an insulating support layer including a stacked region above, below, or above and below the high density substrate layer and the low density substrate layer; insulating layer vias penetrating through the stacked region and connected to the patterns of the high density substrate and the low density substrate layer; and an outer pattern layer including circuit patterns connected to the insulating layer vias and formed on the stacked region of the insulating support layer. A method for manufacturing the hybrid substrate is also proposed.
申请公布号 KR20140081193(A) 申请公布日期 2014.07.01
申请号 KR20120150694 申请日期 2012.12.21
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 CHOI, JIN WON
分类号 H05K3/46;H05K3/40 主分类号 H05K3/46
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