发明名称 Substrate processing appratus and method for treating subtrate
摘要 PURPOSE: An apparatus and a method for treating a substrate are provided to etch a substrate edge region while locally heating an edge region of a substrate by installing a heating unit which heats the edge region of the substrate. CONSTITUTION: An apparatus for treating a substrate includes a first chamber(100), a second chamber(200), an edge etching unit(210), and a heating unit(111,400). The first chamber includes a space for treating a substrate. The second chamber is connected to a side surface of the first chamber. The edge etching unit is positioned inside the second chamber. The heating unit is installed in the edge etching unit, and heats an edge region of the substrate.
申请公布号 KR101413525(B1) 申请公布日期 2014.07.01
申请号 KR20080031728 申请日期 2008.04.04
申请人 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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