| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment device capable of preventing a substrate from being cracked at flash light irradiation.SOLUTION: A susceptor 74 of a holding part 7 holding a semiconductor wafer W comprises: a holding plate 75; a guide ring 76; and a plurality of supporting pins 77. The annular-shaped guide ring 76 having an inner diameter larger than a diameter of the semiconductor wafer W is installed to an upper surface peripheral edge of the disc-shaped holding plate 75. An inner periphery of the guide ring 76 is a taper plane 76a. The semiconductor wafer W before flash light irradiation is supported by the plurality of supporting pins 77. By making the guide ring 76 be in an annular shape, a contact area at the time when the semiconductor wafer W jumped from the susceptor 74 by rapid thermal expansion of a surface at flash light irradiation is dropped and collides with the guide ring 76, is enlarged to alleviate an impact, and thereby, cracks of the wafer can be prevented. |
