| 摘要 |
PROBLEM TO BE SOLVED: To increase an axial luminous intensity and brightness of emitted light from a semiconductor light-emitting device.SOLUTION: A semiconductor light-emitting device comprises a substrate and a semiconductor light-emitting element arranged on one principal surface of the substrate. The substrate has on the one principal surface, an uneven structure which reflects at least a part of light radiated from the semiconductor light-emitting element toward the substrate. A refraction index of the inside of a recess of the uneven structure is lower than a refraction index of a material which composes an opposite surface of the semiconductor light-emitting element, which is opposed to the one principal surface of the substrate. |
