发明名称 ESD PROTECTION CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To provide an ESD protection circuit which can prevent malfunction of a shunt transistor at power-up, and can cope even with application of ESD to a control terminal to which an external control signal for controlling the shunt transistor on/off is applied.SOLUTION: An ESD protection circuit includes a first RC circuit having a first capacitor and a first resistor connected in series between a first power supply terminal to which a power supply voltage on the high potential side is applied, and a second power supply terminal to which a power supply voltage on the low potential side is applied. The ESD protection circuit also includes a first shunt transistor having a main current path which is connected between the first and second power supply terminals, in response to the potential at a first common node connected with the first capacitor and first resistor. The ESD protection circuit further includes a first logic circuit for supplying the output signal to the control electrode of the first shunt transistor, in response to the potential at the first common node, and a first control terminal connected with the first common node and to which a control signal of a predetermined voltage can be applied externally.</p>
申请公布号 JP2014120711(A) 申请公布日期 2014.06.30
申请号 JP20120276763 申请日期 2012.12.19
申请人 TOSHIBA CORP 发明人 WATANABE KENTARO
分类号 H01L27/04;H01L21/822;H01L27/06 主分类号 H01L27/04
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