| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having high reliability as a memory cell.SOLUTION: A nonvolatile semiconductor memory device includes: a semiconductor region; a first insulating film provided on the semiconductor region; a charge storage film provided on the first insulating film; a hydrogen diffusion prevention film provided on the charge storage film; a second insulating film provided on the hydrogen diffusion prevention film; a control gate electrode provided on the second insulating film; a hydrogen emission film provided on the control gate electrode; and side walls provided on side surfaces of a laminated structure including the first insulating film, the charge storage film, the hydrogen diffusion prevention film, the second insulating film, and the control gate electrode, and containing a material that prevents diffusion of hydrogen. |
