发明名称 GAS INJECTION-SUCTION UNIT AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME
摘要 A gas intake and exhaust unit may include a gas supply pipe with a gas supply path; a gas exhaust pipe with a gas exhaust path communicating with the gas supply path; and a gas intake pipe to surround at least a part of the outer peripheral portion of the gas exhaust pipe so that a gas intake path is formed inside the gas intake pipe. Accordingly, when the gas intake and exhaust unit is disposed close to a substrate, supply and suction of gas are simultaneously performed. Accordingly, since deposition is performed at normal pressure, a device and time to ensure additional vacuum are not required. Further, a continuous process is possible so that pre-processing and post-processing may be simultaneously performed on the same line, and a plurality of gas intake and exhaust units are installed so that a multi-component compound may be formed. In this case, a type of a heat source and supplied heat energy may be determined according to a decomposition temperature of each source.
申请公布号 KR101409974(B1) 申请公布日期 2014.06.27
申请号 KR20120096954 申请日期 2012.09.03
申请人 发明人
分类号 H01L21/02;H01L21/205 主分类号 H01L21/02
代理机构 代理人
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