| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate type bipolar transistor module case comprising polyarylene sulfide-based composition that is excellent in electrical characteristics, such as tracking property, etc., as well as in toughness, and excellent in mechanical strength, melt flow property, mold releasability, mold contamination and formed part appearance.SOLUTION: The insulated gate type bipolar transistor module case is characterized to comprise polyarylene sulfide-based composition that is obtained by containing, for 100 pts.wt. of polyarylene sulfide (A), 3 to 35 pts.wt. of ethylene-vinyl alcohol-based copolymer (B), 3 to 35 pts.wt. of polyethylene-based copolymer (C), 50 to 200 pts.wt. of magnesium hydroxide (D), and 50 to 150 pts.wt. of fibrous filler (E). |
