发明名称 PLASMA FLOOD GUN AND ION IMPLANTER
摘要 PROBLEM TO BE SOLVED: To provide a plasma flood gun and an ion implanter in which adhesion of particulates, emitted from a filament, to a wafer can be more reduced than before.SOLUTION: A plasma flood gun includes a guide tube, an arc chamber 26 attached to the guide tube, a filament 31 arranged in the arc chamber 26, and an aperture 32 arranged between the filament 31 and the guide tube, and having a protrusion 32b protruding toward the filament 31 and a hole 32a provided at the top of the protrusion 32b. An ion implanter includes an ion generating section, an ion implantation chamber, and an ion transmission section for transmitting specific ion, selected from ions generated in the ion generating section, to the ion implantation chamber. The plasma flood gun is arranged in the ion implantation chamber.
申请公布号 JP2014116085(A) 申请公布日期 2014.06.26
申请号 JP20120267080 申请日期 2012.12.06
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 TSUJI SHINICHI
分类号 H01J37/077;H01J37/317;H01L21/265 主分类号 H01J37/077
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