| 摘要 |
<p>A vertical thin film transistor includes a substrate, a first partition, a source electrode, a drain electrode, a semiconductor layer, a gate insulation film and a gate electrode. The first partition and the second partition are arranged to be separated from each other on the substrate. The source electrode is formed on an upper surface of the first partition. The drain electrode is provided on the substrate between the first partition and the second partition. The semiconductor layer is formed on the source electrode, one side of the first partition and the drain electrode. The gate insulation film covers the first partition, the second partition, the source electrode, the drain electrode and the semiconductor layer. The gate electrode is formed on a plane between the first partition and the second partition. The vertical thin film transistor may be formed without using a mask.</p> |
