METHOD FOR PREPARING GAN-BASED WHITE-LIGHT FLIP CHIP

摘要

A method for preparing a GaN-based white-light flip chip not limited by a growth substrate comprises: growing a buffering layer, an n-type GaN layer (102, 202), an active layer (103, 203) and a p-type GaN layer (104, 204) on a growth substrate (101, 201) in sequence, so as to form a GaN-based semiconductor multi-layer structure; preparing a P electrode (108, 208) and an N electrode (109, 209) on the semiconductor multi-layer structure, the P electrode (108, 208) and the N electrode (109, 209) being located at the same side of the semiconductor multi-layer structure and separated by using a nonconducting dielectric film (107，207); coating first adhesive (110, 210) on the semiconductor multi-layer structure, and carrying solidification with a first temporary substrate (111, 211); stripping off the growth substrate (101, 201); coating second adhesive (112, 212) on the exposed surface of the semiconductor multi-layer structure after the stripping, and carrying combination with a permanent support substrate (113, 213); and removing the first temporary substrate (111, 211) and the first adhesive (110, 210), the permanent support substrate (113, 213) is a ceramic or glass transparent substrate doped with phosphor powder. In the method for preparing the GaN-based white light flip chip, a process of transferring the substrate twice is used, the limit of the growth substrate by the GaN-based flip chip is removed, and the semiconductor multi-layer structure is fixed on the transparent permanent support substrate (113, 213) doped with phosphor powder, so as to obtain the GaN-based LED flip chip emitting directly white light, and the packaging cost can be reduced and the packaging yield can be improved.