| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing a tunnel barrier layer or a gate insulating layer which has excellent film quality and uniformity in thickness.SOLUTION: An area of a substrate 2 on which an erosion area of a target 126a is projected along a normal 145 of a surface of the target 126a is shielded by a shield 139A and further an area in which an angle formed between a normal of a surface 2a of the substrate 2 and an incidence direction of sputter particles generated from the center of the target 126a is 45° or more is shielded by the shield 139A, and in this state, sputter particles passing an aperture formed on the shield 139A are deposited on the linearly moved substrate.</p> |
