发明名称 |
QUATERNARY PHOSPHONIUM SALT, EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND INCLUDING THE QUATERNARY PHOSPHONIUM SALT, AND SEMICONDUCTOR DEVICE ENCAPSULATED WITH THE EPOXY RESIN COMPOSITION |
摘要 |
A quaternary phosphonium salt, an epoxy resin composition including the quaternary phosphonium salt, and a semiconductor device encapsulated with the epoxy resin composition, the quaternary phosphonium salt being represented by Formula 1:; |
申请公布号 |
US2014179827(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201314069564 |
申请日期 |
2013.11.01 |
申请人 |
KIM Min Gyum;HAN Seung;CHEON Hwan Sung |
发明人 |
KIM Min Gyum;HAN Seung;CHEON Hwan Sung |
分类号 |
C08K5/50;H01L23/29;C08K5/5419 |
主分类号 |
C08K5/50 |
代理机构 |
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代理人 |
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主权项 |
1. A quaternary phosphonium salt represented by Formula 1: wherein: R1, R2, R3, and R4 are each independently a substituted or unsubstituted C1-C30 hydrocarbon group or a substituted or unsubstituted C1-C30 hydrocarbon group including at least one heteroatom; X is a substituted or unsubstituted C1-C30 hydrocarbon group or a substituted or unsubstituted C1-C30 hydrocarbon group including at least one heteroatom; Y is a substituted or unsubstituted C1-C30 hydrocarbon group or Si substituted with one to three substituted or unsubstituted C1-C30 hydrocarbon groups; n and m are each independently an integer of 1 to 6, provided that when Y is Si, a sum of m and a number of substituents on the Si is a maximum of 4; and l is a number greater than 0 and up to 6. |
地址 |
Uiwang-si KR |