IN-SITU METAL RESIDUE CLEAN

摘要

A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer is provided. The substrate is placed in a plasma processing chamber. The oxide layer is etched through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer. The patterned organic mask is stripped. The metal residue is cleaned by the steps comprising providing a cleaning gas comprising BCl3 and forming a plasma from the cleaning gas. The substrate is removed from the plasma processing chamber.

主权项

1. A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer, comprising:
placing the substrate in a plasma processing chamber; etching the oxide layer through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer; stripping the patterned organic mask; cleaning the metal residue, comprising:
providing a cleaning gas comprising BCl3; andforming a plasma from the cleaning gas; and removing the substrate from the plasma processing chamber.