| 发明名称 |
METHOD FOR FORMING GRAPHENE PATTERN |
| 摘要 |
Disclosed are methods for forming a graphene pattern. The method includes forming a fine pattern defined by at least one trench on a substrate, applying a graphene solution on the fine pattern, and selectively forming a graphene layer on the fine pattern contacting the graphene solution. |
| 申请公布号 |
US2014178598(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201313916404 |
申请日期 |
2013.06.12 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHUNG Kwang Hyo;KIM Jin Tae;YU Young-Jun;CHOI Jin Sik;YOUN Doo Hyeb;KIM Ki-Chul;CHOI Choon Gi |
| 分类号 |
B05D7/24 |
主分类号 |
B05D7/24 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for forming a graphene pattern comprising:
forming a fine pattern defined by at least one trench on a substrate; providing a graphene solution on the fine pattern; and selectively forming a graphene layer on the fine pattern contacting the graphene solution. |
| 地址 |
Daejeon KR |
