摘要 |
<p>A graphene and metal interconnect structure and methods of making the same. A multiple layer graphene structure may be grown using a graphene catalyst. The graphene forms an electrical connection 30 between two or more vias (16,36) or components 20, or a combination of vias and components. A via includes a fill metal, with at least a portion of the fill metal 36 being surrounded by a barrier metal 38. A component may be a routing track, a clock signal source, a power source, an electromagnetic signal source, a ground terminal, a transistor, a macrocell, or a combination thereof. The graphene is grown, using a graphene catalyst, from both solid and liquid carbon sources using chemical vapor deposition (CVD) at a temperature between 300°C - 400°C. The graphene catalyst can be an elemental form of, or alloy including, nickel, palladium, ruthenium, iridium or copper.</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BAO, JUNJING;BONILLA, GRISELDA;FILIPPI, RONALD, G.;LUSTIG, NAFTALI, E.;SIMON, ANDREW, H.;CHOI, SAMUEL, S. |