| 发明名称 |
NON-VOLATILE MEMORY CELL |
| 摘要 |
A non-volatile memory cell comprises a coupling device, a first and a second select transistor, and a first and a second floating gate transistor is disclosed. The coupling device is formed in a first conductivity region. The first select transistor is serially connected to the first floating gate transistor and the second select transistor. Moreover, the first select transistor, the first floating gate transistor, and the second select transistor are formed in a second conductivity region. The second floating gate transistor is formed in a third conductivity region, wherein the first conductivity region, the second conductivity region, and the third conductivity region are formed in a fourth conductivity region. The first conductivity region, the second conductivity region, and the third conductivity region are wells, and the fourth conductivity region is a deep well. The third conductivity region surrounds the first conductivity region and the second conductivity region. |
| 申请公布号 |
US2014177338(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201414190116 |
申请日期 |
2014.02.26 |
| 申请人 |
eMemory Technology Inc. |
发明人 |
Ching Wen-Hao;Wang Shih-Chen |
| 分类号 |
G11C16/04;H01L27/115 |
主分类号 |
G11C16/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory cell comprising:
a coupling device formed in a first conductivity region; a first select transistor serially connected to a first floating gate transistor and a second select transistor, wherein the first select transistor, the first floating gate transistor, and the second select transistor are formed in a second conductivity region; and a second floating gate transistor formed in a third conductivity region, wherein the first conductivity region, the second conductivity region, and the third conductivity region are formed in a fourth conductivity region, and a gate of the first floating gate transistor, a gate of the second floating gate transistor, and an electrode of the coupling device are a single-polycrystalline formed floating gate; wherein the first conductivity region, the second conductivity region, and the third conductivity region are wells, and the fourth conductivity region is a deep well; wherein the third conductivity region surrounds the first conductivity region and the second conductivity region. |
| 地址 |
Hsin-Chu TW |
