NITRIDE SEMICONDUCTOR EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor epitaxial wafer which allows transistors having equivalent performance to be obtained from the same semiconductor wafer with high yield when a field effect transistor is manufactured.SOLUTION: A nitride semiconductor epitaxial wafer at least comprises: a substrate 2; a first nitride semiconductor layer 4; and a second nitride semiconductor layer 5 which is formed on the first nitride semiconductor layer 4 and has electron affinity smaller than that of the first nitride semiconductor layer 4. A value obtained by dividing a standard deviation of film thicknesses of the second nitride semiconductor layer 5 by an average value of the film thicknesses and multiplying the resultant by 100 and normalizing the multiplied resultant is less than 5% and fluctuation of sheet resistance depending on existence and non-existence of light irradiation is less then 10%.