| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a backside illuminated image sensor and a manufacturing method thereof.SOLUTION: The backside illuminated image sensor includes: a light receiving element 106 formed in a first substrate 100C; an interlayer insulation layer 108A formed on the first substrate including the light receiving element; a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the light receiving element; a spacer formed on an inner sidewall of the via hole; an alignment key 112 to fill the via hole; interconnection layers 113[M1], 116[M2], 119[M3], 122[M4] formed on the interlayer insulation layer in a multilayer structure in which a backside of a lowermost layer of the interconnection layer 113[M1] is connected to the alignment key; a passivation layer 124 covering the interconnection layers; a pad 125 locally formed on a backside of the first substrate and connected to a backside of the alignment key; and a color filter 128 and a microlens 130 formed on the backside of the first substrate corresponding to the light receiving element.</p> |
