PHOTORESIST REMOVER

摘要

Disclosed is a cleaning solution with low etching ability suitable for cleaning a relatively thick photoresist. The photoresist cleaning solution with low etching ability contains (a) a quaternary ammonium hydroxide, (b) an ethanol amine, (c) a sugar or sugar alcohol, (d) a surfactant, and (e) a solvent. The photoresist cleaning agent with low etching ability can effectively remove the photoresist on a semiconductor wafer, and at the same time fundamentally won't attack a substrate of metals such as aluminum, copper and the like, and has good application prospects in the field of semiconductor wafer cleaning etc.