| 摘要 |
PROBLEM TO BE SOLVED: To provide sputtering equipment capable of suppressing abnormal discharge.SOLUTION: Sputtering equipment includes a target 31, a reaction gas supply portion 25, a target power source 33, and a controller controlling the drive of the reaction gas supply portion 25 and the target power source 33 to form an aluminum oxide film. The range of voltages applied to the target 31 includes an oxidation mode section in which the target 31 is sputtered in an oxidation mode and a transition mode section in which the target 31 is sputtered in a transition mode. The controller sets a voltage to be applied to the target 31 within the oxidation mode section when formation of an aluminum oxide film is started, sets a voltage to be applied to the target 31 within the transition mode section from the halfway of formation of the aluminum oxide film to completion of the formation of the aluminum oxide film and changes the voltage by modifying the flow rate of oxygen gas supplied by the reaction gas supply portion 25. |
