| 摘要 |
PURPOSE:To curtail use of the gold material, as well as to enhance yield of pellet attachment at a semiconductor device by a method wherein nickel-phosphorus layers are provided on the back of a pellet and on the pellet attaching face of a lead frame. CONSTITUTION:The Ni-P layers 3, 5 are provided respectively on the upper face of a tab 2 of the lead frame 1 and on the back of the semiconductor pellet 4, an interposing metal layer 6 is interposed between both the Ni-P layers 3, 5 thereof, they are heated, and moreover the semiconductor pellet 4 is absorbed by a collet to be held, and by performing scrub action, the three layers 3, 6, 5 are fused into one in inactive gas like N2 gas to perform attachment of the pellet. No flux is needed to be used. After attachment of pellet is finished, electrode pads of the semiconductor pellet 4 and the inner lead parts of the lead frame 1 are connected electrically with wires 7. Moreover the pellet attaching region containing the semiconductor pellet 4, the wires 7, the tab 2, the inner lead parts, etc., is sealed by molding with resin 8. |
