发明名称 Improvements in or relating to methods of applying an ohmic contact to semi-conductive bodies of a p-type conductive telluride of a bivalent metal
摘要 789,338. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Nov. 28, 1955 [Dec. 1, 1954], No. 34019/55. Class 37. An ohmic contact is applied to a P-type semiconductor body consisting of a telluride of a bivalent metal such as Zn, Cd, Hg, Sn and Pb, by applying tellurium locally to the body, and then melting the Te in a non-oxidizing atmosphere. The Te may be applied in the form of a powder or paste, or as a solid piece, or by evaporation. A layer of gold may be added to the Te. In the example described, a piece of Te is applied to a plate of Cd Te and melted at 500‹ C. for two minutes in an atmosphere of nitrogen with 10 per cent of hydrogen. The semi-conductor body may also comprise monovalent cations such as Cu, Ag or Au and the alkali metals.
申请公布号 GB789338(A) 申请公布日期 1958.01.22
申请号 GB19550034019 申请日期 1955.11.28
申请人 PHILIPS ELECTRICAL INDUSTRIES LIMITED 发明人
分类号 H01L21/00;H01L21/06;H01L21/40;H01L21/445 主分类号 H01L21/00
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