发明名称 ELECTROSTATIC DISCHARGE (ESD) CLAMP
摘要 One or more techniques or systems for forming an electrostatic discharge (ESD) clamp are provided herein. In some embodiments, the ESD clamp includes a first pad and a second pad. For example, the first pad is a positive supply voltage (Vdd) pad and the second pad is a negative supply voltage (Vss) pad. In some embodiments, active regions and oxide regions are associated with substantially rounded shapes or obtuse angles. Additionally, metal regions are configured to be in contact with at least some of at least one of the active regions or the oxide regions and the first pad. In some embodiments, the metal regions are substantially wedge shaped. In this manner, an ESD clamp with enhanced performance is provided, at least because the respective active regions are substantially rounded or associated with obtuse angles, for example.
申请公布号 US2014175611(A1) 申请公布日期 2014.06.26
申请号 US201213721431 申请日期 2012.12.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED 发明人 Hsu Chia-Wei
分类号 H01L23/60;H01L21/48 主分类号 H01L23/60
代理机构 代理人
主权项 1. An electrostatic discharge (ESD) clamp, comprising: a first pad; a first active region associated with a first active substantially rounded shape; a first oxide region associated with a first oxide substantially rounded shape, the first oxide region encompassing at least some of the first active region; a second active region associated with a second active substantially rounded shape, the second active region encompassing at least some of the first oxide region; one or more second pads; and one or more metal regions associated with a substantially wedged shape, a metal region in contact with at least one of the first pad, the first active region, the first oxide region, the second active region, or at least some of the second pads.
地址 Hsin-Chu TW