发明名称 |
METHOD FOR FORMING COPPER WIRING |
摘要 |
In a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess which is formed in a substrate in a predetermined pattern, a barrier film formed of a TaAlN film is formed at least on the surface of the recess by thermal ALD or thermal CVD. Then a Cu film is formed to fill the recess with the Cu film. Further, the Cu wiring is formed in the recess by polishing the entire surface of the substrate by CMP. |
申请公布号 |
US2014175046(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201314136838 |
申请日期 |
2013.12.20 |
申请人 |
Tokyo Electron Limited |
发明人 |
ISHIZAKA Tadahiro;HASEGAWA Toshio |
分类号 |
H05K3/10 |
主分类号 |
H05K3/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. A Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a substrate in a predetermined pattern, the Cu wiring forming method comprising:
forming a barrier film formed of a TaAlN film at least on a surface of the recess by thermal ALD or thermal CVD; forming a Cu film to fill the recess with the Cu film; and forming a Cu wiring in the recess by polishing the entire surface of the substrate by CMP. |
地址 |
Tokyo JP |