ELECTRONIC CHIP AND METHOD OF FABRICATING THE SAME
摘要
<p>An electronic chip and a method of fabricating the same are provided. A semiconductor chip may include a substrate; an active device integrated with the substrate; a lower interlayer dielectric which covers the front surface of the result where the active device is provided, and a passive device provided on the lower interlayer dielectric; an upper interlayer dielectric which covers the front surface of the result where the passive device is provided; and a ground electrode provided on the upper interlayer dielectric. In this case, the upper interlayer dielectric layer is made of a material whereby the dielectric constant is higher than that of the lower interlayer dielectric.</p>
申请公布号
KR20140078185(A)
申请公布日期
2014.06.25
申请号
KR20120147251
申请日期
2012.12.17
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
PARK, YOUNG RAK;KO, SANG CHOON;MIN, BYOUNG GUE;LIM, JONG WON;AHN, HO KYUN;BAE, SUNG BUM;MUN, JAE KYOUNG;NAM, EUN SOO