| 摘要 |
Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, such as electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse, etc. The diode can be constructed by P+ and N+ active regions on an N well as the P and N terminals of the diode. The OTP device has an OTP element coupled to the diode. The OTP device can be used to construct a two-dimensional OTP memory with the N terminals of the diodes in a row connected as a wordline and the OTP elements in a column connected as a bitline. |
| 主权项 |
1. An One-Time Programmable (OTP) memory, comprising:
a plurality of OTP cells, each including an OTP element and a diode as program selector having at least a first active region with a first type of dopant to provide a first terminal of the diode, and a second active region with a second type of dopant to provide a second terminal of the diode, both active regions being fabricated from sources or drains of CMOS devices and residing in a common CMOS well, the first terminal of the diode coupled to a first terminal of the OTP element, the OTP element being programmable by conducting a current flowing through the OTP element and the diode; a plurality of local wordlines, each coupled to a plurality of the OTP cells via the second terminal of the diodes and having a first resistivity; a plurality of global wordlines, each coupled to at least one of the local wordlines and having a second resistivity; and a plurality of bitlines, each coupled to a plurality of the OTP cells via the second terminal of the OTP element.
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