Semiconductor memory device and method of manufacturing the same

摘要

A semiconductor memory device includes a plurality of memory blocks formed over a substrate including source regions and separated from each other by a slit, a plurality of bit lines coupled to the strings of the memory blocks and disposed over the memory blocks, and source contact lines formed within the slits, coupled to the source regions, respectively, and disposed in a direction to cross the plurality of bit lines.

主权项

1. A semiconductor memory device, comprising:
channel layers vertically protruded from a substrate including a source region; stack structures stacked over the substrate and surrounding the channel layers; a slit penetrating the stack structures so that the stack structures are divided into memory blocks; bit lines coupled to the channel layers; and a source contact line formed within the slit, coupled to the source regions, and disposed in a direction to cross the bit lines.