发明名称 Method of adjustment during manufacture of a circuit having a capacitor
摘要 A method of adjustment during manufacture of a capacitance of a capacitor supported by a substrate, the method including the steps of: a) forming a first electrode parallel to the surface of the substrate and covering it with a dielectric layer; b) forming, on a first portion of the dielectric layer, a second electrode; c) measuring the electrical signal between the first electrode and the second electrode, and deducing therefrom the capacitance to be added to obtain the desired capacitance; d) thinning down a second portion of the dielectric layer, which is not covered by the second electrode, so that the thickness of this second portion is adapted to the forming of the deduced capacitance; and e) forming a third electrode on the thinned-down portion and connecting it to the second electrode.
申请公布号 US8756778(B2) 申请公布日期 2014.06.24
申请号 US201113159244 申请日期 2011.06.13
申请人 STMicroelectronics SA 发明人 Bar Pierre;Joblot Sylvain;Petit David
分类号 H01G7/00 主分类号 H01G7/00
代理机构 Seed IP Law Group PLLC 代理人 Seed IP Law Group PLLC
主权项 1. A method, comprising: forming a capacitor, the forming including: forming a first electrode substantially parallel to a surface of a substrate and covering the first electrode with a dielectric layer having first and second portions over the first electrode;forming, on the first portion of the dielectric layer, a second electrode that does not cover the second portion;measuring an electrical signal between the first electrode and the second electrode, and deducing from the measured electrical signal a deduced capacitance to obtain a desired capacitance;in response to deducing the deduced capacitance from the measured electrical signal, thinning down the second portion of the dielectric layer to a thickness configured to form the deduced capacitance; andforming a third electrode on the second portion and connecting the third electrode to the second electrode.
地址 Montrouge FR