Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes

摘要

A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.

主权项

1. A method of using an Aluminum (Al) containing barrier layer in a quantum well structure of a device, comprising:
determining one or more acceptable amounts of one or more defects selected from misfit dislocations, stacking faults, and triangular dark defects, and triangular non-luminescent defects; selecting one or more Al compositions to obtain the amounts of the one or more defects; depositing, in a quantum well structure of a device, one or more Al containing barrier layers having the one or more Al compositions to reduce or prevent formation of the one or more defects in the device; and measuring the one or more defects to confirm the one or more amounts were obtained.