Thin film transistor array panel and display device including the same, and manufacturing method thereof

摘要

A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

主权项

1. A thin film transistor array panel comprising:
a source electrode and a drain electrode on an insulating substrate; an oxide semiconductor disposed on the source electrode and the drain electrode; a passivation layer which covers the oxide semiconductor and the insulating substrate; a gate electrode disposed on the passivation lyer; and a pixel electrode connected to the drain electrode, wherein the gate electrode and pixel electrode are in a same single layer.